We report on the fabrication of dendrimer sandwich devices with electricalswitching and memory properties. The storage media is consisted of aredox-gradient dendrimer layer sandwiched in organic barrier thin films. Thedendrimer layer acts as potential well where redox-state changes and consequentelectrical transitions of the embedded dendrimer molecules are expected to beeffectively triggered and retained, respectively. Experimental resultsindicated that electrical switching could be reproducibly obtained in suchdendrimer sandwiches upon a threshold bias voltage. After switching, the deviceconductivity could be increased more than three orders of magnitude, which cankeep stable for several days in ambient conditions. Our work demonstrates thepossibility of using solid-state redox-gradient dendrimer films as hopefulinformation storage media.
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